Ho:Tm:YLF

Ho:Tm:YLF crystal is a 2μm laser crystal sensitized by Tm ions, and the output wavelength is 2.05μm linearly polarized laser. The pump wavelength is 792nm, and the working mode is: Tm ions absorb the 792nm pump light energy, transfer the energy to the upper energy level of the Ho ion laser through a non-radiative transition method

Product Description

Ho:Tm:YLF crystal is a 2μm laser crystal sensitized by Tm ions, and the output wavelength is 2.05μm linearly polarized laser. The pump wavelength is 792nm, and the working mode is: Tm ions absorb the 792nm pump light energy, transfer the energy to the upper energy level of the Ho ion laser through a non-radiative transition method, and emit laser light from the Ho ion. The advantage of this working method is that the structure of the laser is relatively simple, the laser efficiency is high , and it can be miniaturized. Its disadvantage is that the crystal has to bear a large heat loss and is not suitable for high-power output lasers.

Main Features

Linearly polarized laser output

The thermal effect of laser operation is small

Suitable for diode pumped

Suitable for miniaturized compact lasers


Material Properties

Crystal structure

Tetragonal

Melting point

825°C

Moh's hardness

4-5

Density

3.95g/ cm3

Thermal conductivity

0.06W/cm/K

Young's modulus

7.5×1011dynes   cm -2

Tensile strength

3.3×108dynes   cm -2

Coefficient of thermal expansion

[100]   Direction: 13×10 -6 /K

[001]   Direction: 8×10 -6 /K


Product Parameters

Doping concentration

Doping   concentration        Tm:0~10at%   Ho:0~3at%

Can be   customized according to customer requirements

Orientation

[100] or   [001], deviation within 5º

Wavefront distortion

≤0.25λ/25mm   @632.8nm

Crystal rod size

Diameter:   3~9.5mm, Length: 5~120mm , can be customized

Dimensional tolerance

Diameter: +0.00/-0.05mm, Length: ± 0.5mm

Cylindrical processing

Grinding   or Polishing

Parallelism of end faces

≤10"

Perpendicularity between end face and rod axis

≤5′

Flatness of end face

≤λ/10@632.8nm

Surface Quality

10-5   (MIL-O-13830A)

Chamfer

0.15±0.05mm

AR Coating Reflectance

≤0.25%


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